DRD560G90 rectifier diode preliminary information ds 6066 C 1 2 december 2011 (ln28 906 ) 1 /7 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v rrm v conditions drd 59 0g90 drd 59 0g85 drd 59 0g80 90 00 85 00 80 00 v rsm = v rrm +100v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: drd 59 0g85 for a 85 00v device key parameters v rrm 90 00v i f(av) 557 a i fsm 10 000 a (see package details for further information) fig. 1 package outline
DRD560G90 2 / 7 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 684 a i f(rms) rms value - 1074 a i f continuous (direct) on - state current - 1019 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 461 a i f(rms) rms value - 724 a i f continuous (direct) on - state current - 654 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 557 a i f(rms) rms value - 876 a i f continuous (direct) on - state current - 819 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 372 a i f(rms) rms value - 584 a i f continuous (direct) on - state current - 517 a
- 3 - DRD560G90 3 / 7 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 8 ka i 2 t i 2 t for fusing v r = 50% v rrm - ? sine 0.32 ma 2 s i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 1 0 ka i 2 t i 2 t for fusing v r = 0 0 . 5 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.032 c/w single side cooled anode dc - 0.064 c/w cathode dc - 0.064 c/w r th(c - h) thermal resistance C case to heatsink clamping force 43kn double side - .008 c/w (with mounting compound) single side - .016 c/w t vj virtual junction temperature - 160 c t stg storage temperature range - 55 175 c f m clamping force 11 13 kn
DRD560G90 4 / 7 www.dynexsemi.com characteristics symbol parameter test conditions min. max. units v fm forward voltage at 1200 a peak, t case = 16 0 c - 2. 95 v i rm peak reverse current at v drm, t case = 16 0c - 10 0 ma q s total stored charge i f = 2000a, di rr /dt =5 a/s 3300 5000 c i rr peak reverse recovery current t case = 1 6 0c, v r =100v 140 170 a v to threshold voltage at t vj = 1 6 0c - 1. 0 v r t slope resistance at t vj = 1 6 0c - 1.57 5 m ? curves fig.2 maximum & minimum on - state characteristics fig.3 dissipation curves v tm equation where a = - 0.675901 b = 0 .3995 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0 .001796 d = - 0 .040301 these values are valid for t j = 16 0c for i f 200 a to 2000 a 0 500 1000 1500 2000 2500 0 1 2 3 4 5 instantaneous forward current, if - (a) instantaneous forward voltage, vf - (v) vfm max 125oc vfm min 125oc vfm max 25oc vfm min 25oc vfm max 160oc vfm min 160oc
- 5 - DRD560G90 5 / 7 www.dynexsemi.com fig.4 total stored charge fig.5 maximum reverse recovery current fig.6 maximum (limit) transient thermal impedance - junction to case 0 1000 2000 3000 4000 5000 6000 7000 0 5 10 15 20 25 stored charge qs - (uc) rate of decay of forward current dif/dt - (a/us) q s max = 3042.075*(di/dt) 0.2158 q s min = 2007.773*(di/dt) 0.2158 conditions: t j = 160oc i f = 1000a, t p = 1000us , v r = - 100v 0 50 100 150 200 250 300 0 5 10 15 20 25 reverse recovery current, i rr - (a) rate of decay of forward current dif/dt - (a/us) i rrmax = 43.406*(di/dt) 0.5929 i rrmin = 35.76 *(di/dt) 0.5929 conditions: t j = 160oc i f = 1000a, t p = 1000us , v r = - 100v
DRD560G90 6 / 7 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: g
- 7 - DRD560G90 7 / 7 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of any kind. this publicati on is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunc tion may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating beca use there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should alw ays be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as fo llows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operatio ns dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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